The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2001
Filed:
Jun. 09, 1999
Applicant:
Inventor:
Tetsuro Okuda, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/19 ; H01L 2/120 ;
U.S. Cl.
CPC ...
H01S 3/19 ; H01L 2/120 ;
Abstract
A dopant such as Si is introduced to recombination layers,The Si concentration is about 1×10,to 5×10,cm,. Thus, a carrier lifetime in the recombination layers,may be reduced to relatively increase a leakage current flowing the recombination layers,while relatively reducing a leakage current flowing channels