The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2001
Filed:
Aug. 30, 1999
Masami Hashimoto, Hino, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
A low voltage oscillation amplifying circuit including a switching circuit,consisting of first and second MOSFETs,and,of the same conductivity type, which are connected in series and have the gate electrodes connected to each other; and an amplifying circuit,including a third MOSFET,of a first conductivity type and a fourth MOSFET,of a second conductivity type, the gate electrodes of these third and fourth MOSFETs being connected to each other and the drain electrodes of these third and fourth MOSFETs being also connected to each other. The body voltages of the P-type MOSFET,and the N-type MOSFET,are controlled by a control signal and an inverted signal thereof, respectively. During operation of the amplifying circuit, the threshold voltages of the third and fourth MOSFETs,and,are made seemingly low, so that the amplifying circuit can be operated at a low voltage. In addition, the threshold voltage of the second MOSFET can be seemingly increased when the switching circuit is turned off during non-operation of the amplifying circuit, making it possible to prevent leakage current almost completely.