The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2001
Filed:
Dec. 29, 1998
High aspect ratio sub-micron contact etch process in an inductively-coupled plasma processing system
Linda N. Marquez, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
The invention relates to a method of etching a feature in an oxide layer using a photoresist mask, the oxide layer being disposed above an underlying layer of a substrate inside an inductively-coupled plasma processing chamber. The method includes flowing an etchant source gas that includes CH,F,,C,F,and O,or C,H,F,,C,F,and O,into the plasma processing chamber. The method further includes forming a plasma from the etchant source gas. The method additionally includes etching through the oxide layer of the substrate with the plasma, wherein the etching substantially stops on the underlying layer, the underlying being one of a silicon layer, a tungsten-based layer or a TiN layer.