The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2001

Filed:

Mar. 12, 1999
Applicant:
Inventors:

Yoshihiro Kusumi, Tokyo, JP;

Satoshi Iida, Tokyo, JP;

Kazunori Yoshikawa, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract

Described is a semiconductor device having a buried multilayer wiring structure, in which there is ensured good conductivity among a plurality of wiring layers. A lower wiring pattern is formed from conductive material, and an upper wiring pattern is formed from conductive material. Insulating layers are provided between the lower wiring pattern and the upper wiring pattern. A connection section is formed so as to penetrate through the insulating layers to thereby establish continuity between the lower and upper wiring patterns, as well as to have a greater cross-sectional area at the end facing the upper wiring pattern and a smaller cross-sectional area at the end facing the lower wiring pattern.


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