The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2001
Filed:
Jan. 05, 1999
Nobuhiko Inoue, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A plurality of CVD silicon nitride film islands are formed on a lower electrode which is located over a semiconductor substrate. The plurality of CVD silicon nitride film islands are spaced apart from one another to define exposed regions of the lower electrode therebetween. The CVD silicon nitride film islands and the exposed regions of the lower electrode are then subjected to heat treatment in a nitride atmosphere to form thermal silicon nitride films in the exposed regions of the lower electrode. A capacitor insulating film is formed over the CVD silicon nitride film islands and the thermal silicon nitride films, and then an upper electrode is formed over the capacitor insulating film.