The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2001
Filed:
Sep. 23, 1999
Chwan-Ying Lee, Tainan, TW;
Tzuen-Hsi Huang, Dovu Liow, TW;
Industrial Technology Research Institute, Hsin-chu, TW;
Abstract
Base layer formation without the use of selective epitaxial deposition is described. The process begins with the deposition of a seed layer of polysilicon over both the field oxide and the wafer surface that lies between them. An opening in said seed layer is then formed, between the areas of field oxide (and overlying an N+ buried layer). Non-selective epitaxial growth is then used to deposit the transistor's base layer. This automatically results in the formation of self aligned butted contacts of polysilicon on either side of the base. Manufacture of the transistor is completed in the usual way—emitter formation, emitter poly contact formation, ILD deposition, etc.