The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2001
Filed:
May. 21, 1999
Applicant:
Inventor:
Yasumasa Inomoto, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A resist pattern for formation of diffraction grating is formed on a semiconductor substrate so that the area of each aperture of diffraction grating increases gradually toward the end of diffraction grating formation region, after which etching is conducted to produce a diffraction grating substrate. On the diffraction grating substrate are formed a guide layer, an active layer and a clad layer, whereby a semiconductor laser partially having a diffraction grating is produced.
Inomoto, Yasumasa. (2001). Process for production of semiconductor laser grating (U.S. Patent No. 6228671). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6228671
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile