The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2001

Filed:

Jun. 03, 1998
Applicant:
Inventors:

Tetsuo Matsuda, Takasaki, JP;

Maria Ronay, Briarcliff Manor, NY (US);

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B41J 2/145 ; B41J 2/045 ; B41J 2/17 ;
U.S. Cl.
CPC ...
B41J 2/145 ; B41J 2/045 ; B41J 2/17 ;
Abstract

A liquid material jetted from a nozzle is supplied onto a surface of the semiconductor substrate with use of an ink-jet mechanism comprising a liquid material receiving section, a driving section and a nozzle section. Since a film material (liquid material) is supplied by an ink-jet method, not only the film material only be supplied to a desired region of the semiconductor substrate surface and a supply to an unnecessary region is prevented, but also a variation of a film thickness comes not to be dependent on a pattern on the semiconductor substrate. Therefore, in forming a thin film on a semiconductor substrate, a thin film formation is realized so that utilization efficiency of a film material is increased with reduction in loss thereof and a variation of a thickness of the film formed is not influenced by a pattern on the semiconductor substrate.


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