The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2001
Filed:
Aug. 05, 1998
Applicant:
Inventors:
Assignee:
National Science Council of Republic of China, Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/106 ;
U.S. Cl.
CPC ...
H01L 3/106 ;
Abstract
The present invention relates to the structure and fabrication process of a high-gain monocrystal Silicon Carbide phototransistor applicable at high temperature. In view of the optical gain and applicable temperature of the conventional n-p-n type Silicon Carbide phototransistor are too low for practical usage, the present invention utilizes a newly developed n-i-p-i-n structure to strengthen the intrinsic properties of the element, in order to enhance optical gain of the phototransistor for being able to operate at high temperature steadily.