The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2001
Filed:
Jun. 03, 1999
Applicant:
Inventor:
Aldo Losavio, Bergamo, IT;
Assignee:
STMicroelectronics S.r.l., Agrate Brianza, IT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ; H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1302 ; H01L 2/1336 ;
Abstract
A method for recovering the original properties of a silicon oxide film that has suffered a high energy implantation of dopants in the underlying silicon substrate, includes a brief heat treatment without causing an excessive lateral diffusion in the silicon substrate of the implanted dopants. Heat treating in an oven at a temperature of 800° C. for few minutes per wafer, which was subjected to high energy implantation, makes it possible to recover etch rate characteristics that are practically similar to those of the original non-implanted silicon oxide.