The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2001
Filed:
Jan. 22, 1998
Applicant:
Inventor:
Koji Urabe, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ;
Abstract
A manufacturing method for a semiconductor device includes the steps of: forming an insulating film on a silicon substrate; removing a predetermined portion of the insulating film and forming a contact hole wherein the silicon substrate is exposed; and depositing a titanium film on the exposed silicon substrate and the insulating film by setting the temperature of the substrate at 550 degrees Celsius or higher and by employing plasma chemical vapor deposition using halogenated titanium, H,, a gas containing halogen and a carrier gas.