The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2001
Filed:
Aug. 03, 1998
Yasushi Iyechika, Tsukuba, JP;
Yoshinobu Ono, Ibaraki, JP;
Tomoyuki Takada, Tsukuba, JP;
Masaya Shimizu, Tsukuba, JP;
Sumitomo Chemical Company Limited, Osaka, JP;
Abstract
A method for manufacturing a group III-V compound semiconductor represented by the general formula In,Ga,Al,N (where x+y+z=1, 0≦x≦1, 0≦y≦1, and 0≦z≦1) by metalorganic vapor phase epitaxy method is provided. The group III-V compound semiconductor has a semiconductor layer consisting of a p-type dopant-nondoped layer, and a semiconductor layer including a p-type dopant-doped layer. In the method, a reactor for growing the semiconductor layer consisting of a p-type dopant-nondoped layer and a reactor for doping a p-type dopant are mutually different.