The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2001
Filed:
Aug. 19, 1999
Method of cleaving a semiconductor wafer including implanting and annealing resulting in exfoliation
Todd William Simpson, London, CA;
Ian Vaughan Mitchell, London, CA;
Grantley Oliver Este, Dunrobin, CA;
Frank Reginald Shepherd, Kanata, CA;
Nortel Networks Limited, Montreal, CA;
Abstract
A method of cleaving a semiconductor wafer comprising a deep ion implantation induced selective area of exfoliation. The method includes steps of selectively masking the material with a mask having edges parallel to natural cleavage planes of the semiconductor material, implanting unmasked regions of the material with light ions of hydrogen or helium, and annealing to cause exfoliation of the material from the implanted regions. As a result of exfoliation, the patterned structure remaining on the wafer and pieces of the exfoliated material have high quality sidewall-facets which provides cleaved facets along the cleavage planes of the material. A method of manufacturing optoelectronic devices and semiconductor laser devices is provided.