The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 01, 2001

Filed:

Aug. 22, 2000
Applicant:
Inventor:

Min Gyu Lim, Chungcheongbuk-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18247 ;
U.S. Cl.
CPC ...
H01L 2/18247 ;
Abstract

Semiconductor memory and a method for fabricating the same, in which sides of a floating gate is formed to have a streamlined profile, for improving a device performance, the semiconductor memory including a semiconductor substrate, a plurality of field oxide films formed at fixed intervals in one direction for isolating an active region between adjacent field oxide films, a plurality of control gates formed at fixed intervals in a second direction perpendicular to the field oxide films, a plurality of floating gates respectively formed under the control gates spaced a distance from each other each having edge portions in the second direction with moderate slopes, an interlayer insulating layer formed at interfaces between the floating gate and the control gate, and source/drain formed in surfaces of a semiconductor substrate on both sides of the control gate.


Find Patent Forward Citations

Lim, Min. (2001). Semiconductor memory and method for fabricating the same (U.S. Patent No. 6225164). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6225164

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…