The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2001

Filed:

Sep. 12, 1997
Applicant:
Inventor:

Tadashi Nagakawa, Nabari, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/335 ;
U.S. Cl.
CPC ...
H04N 5/335 ;
Abstract

A solid-state imaging device has a progressive-scan structure and includes, in a unit pixel area of a semiconductor substrate, a photoelectric conversion region and a vertical transfer CCD region for reading and transferring a signal charge stored in the photoelectric conversion region by performing four-phase driving using two vertical transfer electrodes each having a two-layer structure formed over the semiconductor substrate with a gate insulation layer disposed therebetween. Among the two vertical transfer electrodes each having a two-layer structure, lead parts of one vertical transfer electrode having the two-layer structure are positioned on the photoelectric conversion region in the unit area.


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