The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2001
Filed:
Mar. 04, 1999
Applicant:
Inventor:
Thomas C. Holloway, Murphy, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/9167 ; H01L 2/976 ; H01L 2/994 ;
U.S. Cl.
CPC ...
H01L 2/9167 ; H01L 2/976 ; H01L 2/994 ;
Abstract
A transistor is formed on the substrate (,) with a graded doping profile for the gate electrode (,). This graded profile is performed for an N-channel transistor by depositing the gate electrode with two separate layers of material. The first layer is a thin layer of N-doped poly, whereas the second layer is a layer of P-doped poly (,). A layer of cap oxide (,) is disposed over the gate electrode (,) to prevent further implantation of impurities during the source/drain implant operation.