The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2001
Filed:
Apr. 30, 1999
Daniel J. Lamey, Phoenix, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
An electrostatic discharge (ESD) protection circuit (,) includes an active load circuit (,) connected to a Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor (,) having a Lightly Doped Drain (LDD). The active load circuit includes a current limiting circuit (,) and a load transistor (,). The ESD protection circuit (,) operates to protect a power transistor (,) from damage due to an electrostatic charge. During an ESD event, the LDMOS transistor (,) enters avalanche breakdown after the voltage of the electrostatic charge exceeds the breakdown voltage of the LDMOS transistor (,). The ESD protection circuit (,) provides a low resistance path during an ESD event to dissipate the electrostatic charge.