The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2001

Filed:

Jul. 10, 1996
Applicant:
Inventors:

Yoshikazu Kojima, Chiba, JP;

Kazutoshi Ishii, Chiba, JP;

Masaaki Kamiya, Chiba, JP;

Yasuhiro Moya, Chiba, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/362 ; H01L 2/900 ; H01L 2/976 ; H01L 2/994 ;
U.S. Cl.
CPC ...
H01L 2/362 ; H01L 2/900 ; H01L 2/976 ; H01L 2/994 ;
Abstract

A semiconductor device including multiple high-voltage drive transistors in its output section is improved in electrostatic withstand voltage by connecting electrostatic protection transistors in parallel with the high-voltage drive transistors connected to the output pads. The drain withstand voltage of the electrostatic protection transistors is made lower than the drain withstand voltage of the high-voltage drive transistors. In addition, the channel length of electrostatic protection transistors is made short to enable efficient bipolar operation of the electrostatic protection transistors.


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