The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2001
Filed:
Oct. 04, 1999
Pablo Eugenio D'Anna, Los Altos, CA (US);
XEMOD, Inc., Santa Clara, CA (US);
Abstract
The lateral RF MOS device having a conducive plug in the source region and an oxide plug in the drain region is disclosed. The oxide plug in the drain region reduces the drain-source capacitance, improves the matching ability to the outside circuitry, and results in a lateral RF MOS device having a wider BW, and an improved power efficiency than a prior art lateral RF MOS device. The oxide plug can comprise a shallow plug or a deep plug. The shallow oxide plug results in a lesser reduction in the drain-source capacitance but is relatively easy to fabricate. The deep oxide plug results in a higher reduction in the drain-source capacitance but is relatively difficult to fabricate.