The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2001
Filed:
Sep. 27, 1999
Takuya Nakamura, Kanagawa-Ken, JP;
Naoki Koido, Yokohama, JP;
Hirohisa Iizuka, Yokohama, JP;
Kazuhito Narita, Yokkaichi, JP;
Seiichi Aritome, Yokohama, JP;
Fumitaka Arai, Isogo-Ku, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor device has a semiconductor substrate, an element isolation insulation film embedded in a trench formed in said semiconductor substrate in a state of protruding from a surface of said semiconductor substrate and a transistor having a gate electrode provided in an area surrounded by said element isolation insulation film on said semiconductor substrate, and containing a gate electrode deposited through a gate insulation film before embedding said element isolation insulation film and an upper edge corner of said element isolation insulation film is selectively recessed. In the thus structured semiconductor device, the upper edge corner of the element isolation insulation film is recessed before the patterning process of the gate electrode, thereby preventing such a situation that a part of the gate electrode remains unetched in the patterning process of the gate electrode.