The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 24, 2001

Filed:

Dec. 02, 1998
Applicant:
Inventors:

Hirofumi Ichinose, Tokyo, JP;

Tsutomu Murakami, Nara, JP;

Yukie Ueno, Nara, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract

The present invention provides a method of producing a photovoltaic element, which comprises a step of immersing a photovoltaic element having at least a first electrode layer, a semiconductor layer and a second electrode layer formed on a substrate into an electrolytic solution, and removing a short circuit current path caused by a defect in the photovoltaic element under the effect of an electric field, wherein the amount of a first ingredient and the amount of a second ingredient contained in the electrolytic solution are adjusted to control the concentration of hydrogen ions in the electrolytic solution, wherein the constituent substance of the second electrode layer is electrically dissolved by the first ingredient, and thereby it also provides a method of producing photovoltaic elements which is capable of reducing a leakage current caused by defect portions such as pin-holes existing in the photovoltaic elements with a large area to obtain photovoltaic elements with excellent photovoltage generation characteristics under a low illuminance.


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