The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2001
Filed:
Feb. 18, 1999
Applicant:
Inventors:
Shuit-tong Lee, Kowloon, HK;
Chun-Sing Lee, Quarry Bay, HK;
Ning Wang, Kowloon, HK;
Igor Bello, Kowloon, HK;
Carol Hau Ling Lai, Kowloon, HK;
Xing Tai Zhou, Shenyang, CN;
Frederick Chi Kan Au, Happy Valley, HK;
Assignee:
City University of Hong Kong, Kowloon, HK;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 2/962 ;
U.S. Cl.
CPC ...
C30B 2/962 ;
Abstract
A method and an apparatus have been developed to grow beta-silicon carbide nanorods, and prepare patterned field-emitters using different kinds of chemical vapor deposition methods. The apparatus includes graphite powder as the carbon source, and silicon powder as silicon sources. Metal powders (Fe, Cr and/or Ni) are used as catalyst. Hydrogen was the only feeding gas to the system.