The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Jan. 29, 1998
Gani Jusuf, San Carlos, CA (US);
Wen Fang, Fremont, CA (US);
Abstract
Low-noise magneto-resistive (MR) pre-amplifier circuit amplifies signal from MR head. MR head is biased at optimal point by current source to generate signal. Current source is powered by regulator to reduce noise contribution from Vcc due to finite output impedance of current source. Self-biased CMOS low-noise amplifier (LNA) minimizes input-referred noised without using negative power supply. Small MOS transistor with feedback tracking loop replaces self-bias resistor which determines lower corner cutoff frequency. This facilitates use of large-value resistor, thereby enabling on-chip integration of DC blocking input capacitor. Gm—Gm amplifier configuration increases gain bandwidth product and minimizes parasitic effects of MOS transistors.