The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Dec. 08, 1998
Applicant:
Inventors:
Atsushi Fujiki, Takasaki, JP;
Tetsuo Iijima, Maebashi, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/500 ;
U.S. Cl.
CPC ...
H01L 3/500 ;
Abstract
A power MOSFET Qp and a protection circuit,are formed over a semiconductor substrate to constitute a construction in which the power MOSFET Qp and the protection circuit,are electrically separated from each other. Then, a screening voltage is applied between the gate electrode and the source electrode of the power MOSFET Qp which is electrically separated from the protection circuit,, thereby eliminating a power MOSFET Qp having a latent defect. Subsequently, a non-defective power MOSFET Qp and the protection circuit,are electrically connected by a bonding wire.