The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Aug. 02, 1999
John Francis Gregg, Oxford, GB;
Patricia Dresel Sparks, Claremont, CA (US);
Isis Innovation Limited, Oxford, GB;
Abstract
A spin transistor is a hybrid magnetic/semiconductor transistor in which a magnetically controllable barrier is provided between a semiconductor base and collector to control the diffusion of charge carriers to the collector. With the spin transistor, the charge carrier populations are distinguished by the direction of the spin or magnetic moment of the carriers instead of the electronic charge. A spin injector is used to spin polarize the charge carrier population so that the population has a selected magnetic moment which population may or may not be enabled to flow to the collector via the magnetic barrier. The spin transistor utilizes the electronic characteristics of a conventional semiconductor transistor in combination with a carrier flow controlled by magnetic moment to maximize gain.