The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
May. 24, 1999
Applicant:
Inventor:
Ko Noguchi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/362 ;
U.S. Cl.
CPC ...
H01L 2/362 ;
Abstract
A semiconductor device includes a protective element which is formed on a semiconductor substrate and conducts current to the semiconductor substrate at a voltage lower than the breakdown voltage of an insulating layer formed between a gate electrode and the semiconductor substrate. The protective element is connected to a gate electrode of a MOS transistor formed on the semiconductor substrate.