The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Sep. 18, 1998
Oved S. F. Zucker, Del Mar, CA (US);
David M. Giorgi, Solana Beach, CA (US);
OptiSwitch Technology Corporation, San Diego, CA (US);
Abstract
In an optically controlled thyristor having a four layer thyristor structure with respective first, second, third and fourth layers, the first and third layers have a first doping type, and the second and fourth layers have a second doping type different from the first doping type. A first shorting structure, formed from a semiconductor material of opposite doping from the first layer, is electrically coupled to the second layer by an electrically conducting, optically opaque layer. A first conductive layer connects between the first layer and the shorting structure and is adapted to transmit light into the first shorting structure. The first semiconductor layer of an optically controlled thyristor may have an aperture therethrough to permit light to enter the second layer from a first conductive layer side without propagating within the first layer. The semiconductor switch may be incorporated into a switching system having a light source controlled by a controller, and having a optical transmission channel coupled between the thyristor switch and the light source.