The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Dec. 24, 1998
Applicant:
Inventor:
Tadashige Sato, Ibaraki, JP;
Assignee:
Mitsubishi Chemical Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/715 ; H01L 3/10328 ;
U.S. Cl.
CPC ...
H01L 2/715 ; H01L 3/10328 ;
Abstract
The present invention provides an epitaxial wafer having compound semiconductor epitaxial layer provided on a substrate, a total thickness of a portion of the compound semiconductor epitaxial layers comprises Ga, As and P as constituent elements being not less than 80 &mgr;m and in the epitaxial layer a low carrier concentration region with a carrier concentration of from 0.5 to 9×10,cm,doped with nitrogen being formed.