The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Feb. 04, 1998
Applicant:
Inventors:
Yoshiyuki Ohkura, Kawasaki, JP;
Hideki Harada, Satsuma-gun, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H07L 2/14163 ;
U.S. Cl.
CPC ...
H07L 2/14163 ;
Abstract
A semiconductor device includes a porous interlayer insulation film including therein a stacking of SiO,particles having a diameter in the range between about 5 nm and about 50 nm and stacked so as to form a void between adjacent particles, wherein the interlayer insulation film has a porosity in the range between about 13% and about 42%.