Method of fabricating a multi-layered wiring system of a semiconductor device

Abstract

A method of constructing a multi-layered wiring system of a semiconductor device is provided, wherein the method includes steps of: sequentially forming first and second conductive layers on a semiconductor unit board having the first insulation layer; forming an anti-reflective layer in a structure of Ti/TiN deposition layers by means of a sputter device having a collimator on the second conductive layer; selectively etching predetermined portions of the anti-reflective layer, the second conductive layer and the first conductive layer to expose predetermined portions of the first insulation layer to form a metal wire; forming the second insulation layer at the front side of the aforementioned structure; forming a via hole by dry-etching predetermined portions of the second insulation layer and the anti-reflective layer to expose predetermined portions on the surface of the metal wire with tapered parts of anti-reflective layer remaining along the edges of the bottom thereof; performing a wet etching process to remove the polymer component from the via hole; performing a RF sputter etching process to remove a natural oxide layer grown on the portions exposed on the surface of the metal wire and the tapered parts of the anti-reflective layer; and forming a conductive plug inside the via hole.