The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
May. 10, 1999
Kye-Hee Yeom, Suwon, KR;
Kyu-Pil Lee, Kyunggi-do, KR;
Samsung Electronic Co., Ltd., , KR;
Abstract
According to the present invention, a conductive pad for a self-aligned direct contact and a self-aligned buried contact is formed of a first pad and a second pad, in twice, wherein the self-aligned direct contact and the self-aligned buried contact connect respectively a bit line/storage electrode to a semiconductor substrate. The first pad and the second pad are formed by combining a reverse active type self-aligned contact (RAT-SAC), a contact type self-aligned contact (CT-SAC), and an epitaxial growth processes. Thus, it is prevented that a shoulder portion of a gate electrode is overetched to create electrical short of pad to gate, a size of a pad is limited to a spacing between gate electrodes, a pad and a semiconductor substrate are not electrically connected each other (not-open), and electrical connection is created by lack of margin between BCs, in case of using only one process selected from a group consisting of the RAT-SAC process, the CT-SAC process, and the epitaxial growth processes.