The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Mar. 03, 1999
Applicant:
Inventor:
Tomoko Yasunaga, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1425 ; H01L 2/104 ; H01L 2/126 ; H01L 2/1324 ; H01L 2/142 ;
U.S. Cl.
CPC ...
H01L 2/1425 ; H01L 2/104 ; H01L 2/126 ; H01L 2/1324 ; H01L 2/142 ;
Abstract
A method of manufacturing a semiconductor device having a silicon substrate containing an impurity diffusion layer is disclosed, that comprises the steps of doping impurities to the silicon substrate through a silicon oxide film with a thickness of 2.5 nm or less at an accelerating voltage of 3 keV or less, the silicon oxide film being formed on the silicon substrate and annealing the silicon substrate with the oxide film left.