The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
May. 14, 1997
Applicant:
Inventor:
Raffaele Zambrano, San Giovanni La Punta, IT;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ;
U.S. Cl.
CPC ...
H01L 2/18238 ;
Abstract
A DMOS device structure includes a lightly doped semiconductor layer of a first conductivity type, a plurality of lightly doped semiconductor regions of a second conductivity type extending from a top surface of the lightly doped semiconductor layer thereinto, source regions of the first conductivity type contained in the lightly doped semiconductor regions and defining channel regions. The lightly doped semiconductor regions are contained in respective enhancement regions of the lightly doped semiconductor layer of the same conductivity type as, but with a lower resistivity than, the lightly doped semiconductor layer.