The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2001
Filed:
Sep. 03, 1998
Hyun-Jo Yang, Choongcheongbuk-Do, KR;
Hyundai Electronics Industries Co., Ltd., Ichon-shi, KR;
Abstract
A method for patterning a chemical amplification photoresist includes the steps of applying a photoresist film on a surface of a semiconductor substrate, exposing the photoresist film to light in an exposing apparatus, and subjecting the substrate and the photoresist to an alkaline gas having over 20 ppb for a predetermined period of time. The gas exposure step removes undesired hydrogen ions from non-exposure portions of the photoresist so that unnecessary patterns are not formed on the photoresist. For instance, the method prevents the formation of a side lobe, when fine patterns on a half-tone phase shift photomask are closely packed. Therefore the method improves a reliability of a semiconductor device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile