The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Feb. 04, 1999
Akihiko Ochiai, Kanagawa, JP;
Masahiro Tanaka, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A trench is formed by forming a photoresist film on an interlevel insulator and performing isoprotonic etching using the photresist film as a mask. A lower electrode layer made of platinum (Pt), a dielectric film made of a dielectric material and an upper electrode layer made of platinum (Pt) are formed in this order by, for example, CVD method respectively. Further, the lower electrode layer and the upper electrode layer are selectively removed by CMP method except for the trench with the interlevel insulator to be an end point detection layer and the surface is flattened at the same time. Accordingly, a capacitor having a structure which has a flat surface comprised of both edges of the lower electrode layer and the dielectric film, and the upper electrode layer is formed in the trench of the interlevel insulator respectively. Etching can be easily performed even a stable material such as platinum is used as an electrode material, and so that manufacturing procedure can be simplified since the lower electrode layer, the dielectric film and the upper electrode layer are processed collectively.