The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Jan. 25, 1999
Applicant:
Inventor:
Naoaki Sudo, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/10 ;
U.S. Cl.
CPC ...
G05F 1/10 ;
Abstract
A reference voltage generating circuit with MOS transistors having a floating gate is disclosed. The reference voltage generating circuit has first and second MOS transistors in which substantially the same current flows by means of a current mirror circuit. The differential voltage between the threshold voltages of the first and second MOS transistors is applied from the source of the first transistor as the reference voltage. The first and second transistors are of a construction that includes a floating gate, and the threshold voltage can be set to any value by means of the amount of charge injected to the floating gate.