The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 10, 2001

Filed:

Jun. 08, 1998
Applicant:
Inventors:

Masaki Kuribayashi, Inagi, JP;

Yuichi Hashimoto, Tokyo, JP;

Akihiro Senoo, Tokyo, JP;

Kazunori Ueno, Ebina, JP;

Seiji Mashimo, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 1/62 ;
U.S. Cl.
CPC ...
H01J 1/62 ;
Abstract

Provided is a method for producing an electroluminescence device, which comprises steps of making a surface of a crystal silicon substrate porous to form a porous silicon film, forming a first electroconductive film on the porous silicon film, forming an electroluminescence film on the first electroconductive film, forming a second electroconductive film on the electroluminescence film, peeling a laminate of the first electroconductive film, electroluminescence film, and second electroconductive film from the crystal silicon substrate, and mounting the laminate on a first base material.


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