The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Apr. 06, 1998
Toshihiko Degawa, Yamatokoriyama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor device, which is characterized in that a trench (,) is formed in a silicon substrate (,), an element isolation film (,) is formed on an inner surface of said trench (,), and a drain region (,), a channel region (,) and a source region (,) are arranged vertically in a region encircled by said element isolation film (,); and that a gate insulating film (,) is formed inside of these regions (,and,) and a gate electrode (,) is formed on an inner side portion of said gate insulating film (,), while a drain electrode (,) or source electrode (,) is formed on an outer side portion of said gate insulating film (,).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile