The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Jun. 04, 1998
Applicant:
Inventors:
Hiroshi Umeda, Hyogo, JP;
Tamotsu Ogata, Hyogo, JP;
Hiroshi Kurokawa, Hyogo, JP;
Hiroaki Tamura, Hyogo, JP;
Assignee:
Mitsubishi Kenki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/9788 ;
U.S. Cl.
CPC ...
H01L 2/9788 ;
Abstract
An object is to provide a semiconductor device having high reliability and capable of high speed operation. The semiconductor device includes a silicon substrate, a silicon nitrided oxide film formed on the silicon substrate, and a gate electrode formed on the silicon nitrided oxide film. Nitrogen is distributed only in the vicinity of an interface between the silicon substrate and the silicon nitrided oxide film. In the vicinity of the interface, every nitrogen atom is bonded to two silicon atoms and one oxygen atom.