The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Aug. 05, 1998
Yoshinori Iida, Tokyo, JP;
Hidetoshi Nozaki, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
An amplifying solid-state image sensor includes a semiconductor substrate, and a plurality of unit pixels arranged on the semiconductor substrate in a two-dimensional manner, in which each of the plurality of unit pixels includes a photodiode for performing the photoelectric conversion, a storage diode for storing electric signal charge obtained by the photodiode, an amplifying transistor for amplifying the electric signal charge stored in the storage diode, and a signal reading section for reading a signal voltage from the amplifying transistor, and in which each of the plurality of unit pixels has a first active region and a second active region in which the second active region has the same conductivity type as that of the semiconductor substrate and an impurity concentration higher than that of the semiconductor substrate, the photodiode in each of the unit pixels is formed in the first active region, and the amplifying transistor is formed in the second region. With this configuration, it is preferable the photodiode has near a surface thereof a pinned photodiode structure in which a photodiode surface high-concentrated impurity region is formed.