The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Jan. 04, 1999
Chungpin Liao, Taichung, TW;
Industrial Technology Research Institute, Hsin-Chu, TW;
Abstract
An alternative to conventional SOI and dielectric filled trenches for electrical isolation of integrated circuits is disclosed. This has been achieved by using proton bombardment to form semi-insulating regions. For all embodiments, the process of the invention begins only after the integrated circuit has been fully formed. In a first embodiment, protons bombard the entire back surface of the wafer thereby forming a substrate of semi-insulating material (resistivity greater than 10,ohm cm) on which the active and passive components rest. In the second embodiment, isolation trenches are formed by bombarding from the top surface through a contact mask formed by means of LIGA or similar technology. The third embodiment is a combination of the first two wherein both isolation regions and the semi-insulating substrate are formed.