The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Dec. 18, 1998
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor substrate, a thin film semiconductor device, a manufacturing method thereof and an anodizing apparatus which can reduce the manufacturing cost and save the resources are provided. According to this invention, a semiconductor thin film is formed through a separation layer of a porous semiconductor on a substrate body of sapphire; the semiconductor thin film is separated from the porosity layer and used for a thin film semiconductor device; and the substrate body from which the semiconductor thin film is separated is used again after the separation layer attached thereto is removed by etching. Since sapphire has high strength, high rigidity, high resistance to wearing, high heat resistance, high abrasion resistance and high chemicals resistance, no deterioration and no damage occur even when the substrate body is repetitively used. Thus, the recycle frequency can be increased, and the reduction of the manufacturing cost and the saving of the resources can be promoted.