The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
May. 21, 1997
Daniel P. Docter, Santa Monica, CA (US);
Kenneth R. Elliott, Thousand Oaks, CA (US);
Other;
Abstract
A method of making material layers for semiconductor devices by metal organic vapor phase epitaxy includes the steps of wafer preparation, oxide desorption, growth and post growth with an accompanying reduction of a residual sheet charge at the substrate-epitaxy interface. During the oxide desorption step, a substrate is heated to a temperature minimlly necessary to remove oxide from the substrate. In accordance with such method, material layers for a low noise high electron mobility transistor (HEMT) can be grown without a bulk, buffer layer immediately adjacent the substrate. Rather, a super lattice structure is immediately adjacent to and between the substrate and a channel layer.