The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Oct. 28, 1999
Robin Lee, Hsinchu Hsien, TW;
Other;
Abstract
A method of manufacturing a two-bit flash memory. A substrate has a thin oxide layer, a silicon nitride layer and a material layer formed thereon in sequence. An opening is formed in the material layer and the silicon nitride layer to expose a portion of the thin oxide layer. A source/drain region is formed in the substrate beneath the portion of the thin oxide layer exposed by the opening. A first dielectric layer is formed in the opening. A portion of the material layer and a portion of the silicon nitride layer are removed to form a spacer on the sidewall of the first dielectric layer. The remaining material layer is removed. A portion of the thin oxide layer exposed by the remaining silicon nitride layer and the first dielectric layer is removed. A second dielectric layer is formed on a portion of the substrate exposed by the remaining thin oxide layer. A control gate is formed over the substrate.