The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Dec. 09, 1997
Applicant:
Inventor:
Takayuki Niuya, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ;
U.S. Cl.
CPC ...
H01L 2/18238 ;
Abstract
A semiconductor device (,) includes gates (,), source/drain regions (,), and self-aligned contacts (,). Each self-aligned contact (,) includes a polysilicon layer (,) overlying the associated source/drain region (,). The polysilicon layer (,) may include different doped regions (,) in accordance with the design and function of the device (,).
Quick Actions:
Niuya, Takayuki. (2001). Self-aligned contact structure and method (U.S. Patent No. 6214658). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6214658
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile