The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Apr. 27, 2000
Yong-beom Kim, Sungnam, KR;
Chang-hwan Kim, Namcheju-gun, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method of forming a photoresist pattern having a uniformly fine line width, and a method of manufacturing a semiconductor device using such a photoresist pattern as a mask, include the step of forming an anti-reflective coating (ARC) using only a hydrocarbon based gas. A highly reflective layer is formed on a semiconductor substrate on which an underlayer is disposed. Using only a hydrocarbon based gas, the ARC is formed on the highly reflective layer. A photoresist layer is formed on the ARC, and is exposed and developed to form a photoresist pattern on the ARC. The ARC and the highly reflective layer under the photoresist pattern are etched using the photoresist pattern as a mask. Thereafter, the photoresist pattern and the ARC are simultaneously removed. The ARC is of an amorphous silicon film having high etching selectivity and being easily removed along with the photoresist pattern.