Lithography mask and a fabricating method thereof

Abstract

The present invention relates to a lithography mask and a fabricating method thereof, more particularly, to a mask or an aperture for lithography using electron or ion beams in a semiconductor device and a fabricating method thereof which improve thermal stability of a mask by forming a stencil mask of double structures comprised of an upper mask that absorbs and releases most of electron energy and a lower mask that defines patterns with electron/ion beams, thereby improving the reliance of fine patterns on an exposure process. The present invention includes a first stencil mask having a first aperture pattern wherein a first electrically conductive layer is formed on a whole surface of the first stencil mask and wherein first beam-penetrating parts are formed in the first aperture pattern, a first protruding part on the edge of the upper face of the first stencil mask, and a second stencil mask having a second aperture pattern wherein a second electrically conductive layer is formed on a whole surface of the second stencil mask, wherein second beam-penetrating parts equal to or bigger than the first beam-penetrating parts and wherein the second stencil mask is attached to the first protruding part.