The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2001
Filed:
Sep. 29, 1998
Applicant:
Inventors:
Todd A. Randazzo, Colorado Springs, CO (US);
Jan Kolnik, Colorado Springs, CO (US);
Assignee:
LSI Logic Corporation, Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
Techniques are described for fabricating a pair of &bgr;-identical transistors, in other words, a pair of transistors whose dimensions and electrical characteristics, other than their respective gate electrode work functions, are substantially similar. In particular, the lengths of respective channel regions for the transistors are substantially the same, and portions of each gate electrode extending above a channel region include only dopants of a single conductivity type. The techniques can be incorporated into a standard CMOS process.