The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2001
Filed:
Jan. 17, 1997
Sarath Gunapala, Valencia, CA (US);
John K. Liu, Pasadena, CA (US);
Jin S. Park, Cerritos, CA (US);
True-Lon Lin, Cupertino, CA (US);
Mani Sundaram, Pasadena, CA (US);
California Institute of Technology, Pasadena, CA (US);
Abstract
An Al,Ga,As/GaAs/Al,Ga,As quantum well exhibiting a bound-to-quasibound intersubband absorptive transition is described. The bound-to-quasibound transition exists when the first excited state has the same energy as the “top” (i.e., the upper-most energy barrier) of the quantum well. The energy barrier for thermionic emission is thus equal to the energy required for intersubband absorption. Increasing the energy barrier in this way reduces dark current. The amount of photocurrent generated by the quantum well is maintained at a high level.