The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2001
Filed:
Mar. 30, 1999
Ikuko Inoue, Kawasaki, JP;
Nobuo Nakamura, Yokohama, JP;
Hirofumi Yamashita, Cambridge, MA (US);
Tetsuya Yamaguchi, Yokohama, JP;
Hidetoshi Nozaki, Yokohama, JP;
Hisanori Ihara, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A MOS-type solid-state image sensor has a plurality of pixel units arranged on a p-type Si substrate in a matrix format. Each pixel unit has a photoelectric conversion portion including a photodiode, and a signal extraction portion including an amplification MOS transistor. Each element isolation region for isolating the pixel units from each other has a field oxide film formed on the substrate and a p-type diffusion layer formed in the substrate layer immediately below the oxide film to have a higher carrier impurity concentration than the substrate layer. The bottom portion of each element isolation region is positioned deeper than the bottom portion of a depletion layer extending from the p-n junction of the photodiode to the substrate in an equilibrium state.